Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator
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چکیده
منابع مشابه
Inkjet-Printed Silver Gate Electrode and Organic Dielectric Materials for Bottom-Gate Pentacene Thin-Film Transistors
An inkjet-printed silver electrode and a spin-coated cross-linked poly(4-vinylphenol)(PVP) dielectric layer were used as a gate electrode and a gate insulator for a bottom-gate pentacene thinlm transistor (TFT), respectively. The printing and the curing conditions of the printed silver electrode were optimized and tested on various substrates, such as glass, silicon, silicon dioxide, polyethers...
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Thin film transistor circuits using organic semiconductors (oTFT) have received intense interest for applications requiring structural flexibility, large area coverage, low temperature processing, and low-cost [1]. Pentacene TFTs have demonstrated the highest performance among TFTs with an organic semiconductor channel. A major limitation, however, has been unusually high operating voltages (20...
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Organic thin-film transistors using pentacene as the semiconductor were fabricated on silicon. A series of phosphonate-based self-assembled monolayers (SAMs) was used as a buffer between the silicon dioxide gate dielectric and the active pentacene channel region. Octadecylphosphonate, (quarterthiophene)phosphonate, and (9-anthracene)phosphonate SAMs were examined. Significant improvements in th...
متن کاملOrganic Thin-Film Transistors and TIPS-Pentacene
TIPS-Pentacene, an organic semiconductor characterized by its good electronic properties, solubility, and stability, is used primarily in organic thin-film transistors (OTFT). This research seeks to create an OTFT by crafting a stencil, depositing the source and drain onto a substrate’s surface, and processing TIPS-Pentacene onto the channel between them. In addition, if time permits, the elect...
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ژورنال
عنوان ژورنال: Brazilian Journal of Physics
سال: 2010
ISSN: 0103-9733
DOI: 10.1590/s0103-97332010000300019